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The wetting of oxide films on silicon and the monitoring of fixed charge

Stoneham, AM; Tasker, PW; (1986) The wetting of oxide films on silicon and the monitoring of fixed charge. SEMICOND SCI TECH , 1 (1) 93 - 96. 10.1088/0268-1242/1/1/011. Green open access

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Abstract

The wetting of thin oxide films on silicon by water is affected by fixed charge near the outer surface of the oxide. We show that existing data can be analysed to give both the depth and concentration of these fixed charges. The precise values indicate depths of a few Angstroms and concentrations of a few times 10(13) cm(-2). There are hints that the values depend on the temperature at which the oxide is grown. We conclude that the wetting angle offers a further method of measuring fixed charge.

Type: Article
Title: The wetting of oxide films on silicon and the monitoring of fixed charge
Open access status: An open access version is available from UCL Discovery
DOI: 10.1088/0268-1242/1/1/011
Publisher version: http://dx.doi.org/10.1088/0268-1242/1/1/011
Language: English
Additional information: Text made available to UCL Discovery by kind permission of IOP Publishing, 2012
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > London Centre for Nanotechnology
URI: https://discovery.ucl.ac.uk/id/eprint/124354
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