Stoneham, AM;
Tasker, PW;
(1986)
The wetting of oxide films on silicon and the monitoring of fixed charge.
SEMICOND SCI TECH
, 1
(1)
93 - 96.
10.1088/0268-1242/1/1/011.
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Abstract
The wetting of thin oxide films on silicon by water is affected by fixed charge near the outer surface of the oxide. We show that existing data can be analysed to give both the depth and concentration of these fixed charges. The precise values indicate depths of a few Angstroms and concentrations of a few times 10(13) cm(-2). There are hints that the values depend on the temperature at which the oxide is grown. We conclude that the wetting angle offers a further method of measuring fixed charge.
| Type: | Article |
|---|---|
| Title: | The wetting of oxide films on silicon and the monitoring of fixed charge |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1088/0268-1242/1/1/011 |
| Publisher version: | http://dx.doi.org/10.1088/0268-1242/1/1/011 |
| Language: | English |
| Additional information: | Text made available to UCL Discovery by kind permission of IOP Publishing, 2012 |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences |
| URI: | https://discovery.ucl.ac.uk/id/eprint/124354 |
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