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As-Flux-Induced Diameter Control in GaAs Nanowires

Yin, Ziyue; Zeng, Haotian; Boras, Giorgos; Juluri, Raghavendra R; Deng, Huiwen; Jia, Hui; Chen, Chong; ... Liu, Huiyun; + view all (2025) As-Flux-Induced Diameter Control in GaAs Nanowires. The Journal of Physical Chemistry C , 129 (39) pp. 17607-17615. 10.1021/acs.jpcc.5c03887. Green open access

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Abstract

Controlling the diameter of self-catalyzed III–V nanowires is important for tailoring their performance in optoelectronic applications. Here, we investigate the impact of abrupt or gradual increase of the V/III flux ratio on the GaAs nanowire diameter. A dynamic model of nanowire diameter is developed to explain the changes induced by flux ratio modulation: (i) shrinkage of the catalyst droplet under elevated As flux and (ii) convergence toward a critical diameter governed by the flux ratio during subsequent nanowire elongation. The different diameter behaviors observed under abrupt or gradual flux increase are elucidated by this relationship, through which we present a quantitative analysis of the relationship between the nanowire diameter and the V/III flux ratio. Epitaxial Ge shells were grown around the modulated-diameter GaAs cores to investigate any impact on the morphology and quality of the group-IV shell. The Ge shell is found to maintain a uniform thickness, regardless of the diameter of the GaAs core. High-resolution annular dark-field scanning transmission electron microscopy reveals Ge shell sidewalls indexed to the {112} planes and rotated by 47° relative to the GaAs core facets, while energy-dispersive X-ray spectroscopy confirms slight Ge interdiffusion into the GaAs core. This work provides a predictive framework for controlling the diameter evolution under varying flux ratios and provides insights into III–V/IV heterointegration.

Type: Article
Title: As-Flux-Induced Diameter Control in GaAs Nanowires
Location: United States
Open access status: An open access version is available from UCL Discovery
DOI: 10.1021/acs.jpcc.5c03887
Publisher version: https://doi.org/10.1021/acs.jpcc.5c03887
Language: English
Additional information: Copyright © 2025 The Authors. Published by American Chemical Society. This publication is licensed under CC-BY 4.0, https://creativecommons.org/licenses/by/4.0/.
UCL classification: UCL
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Engineering Science Faculty Office
URI: https://discovery.ucl.ac.uk/id/eprint/10219267
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