Jia, H;
Park, JS;
Zeng, H;
Yuan, J;
Li, J;
Wang, Y;
Liu, S;
... Liu, H; + view all
(2025)
Low threshold InAs/InP quantum dot lasers on Si.
In:
Proceedings of the 2025 IEEE Silicon Photonics Conference (SiPhotonics).
IEEE: London, UK.
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Abstract
We have developed low threshold InP-based L-band quantum (QD) lasers monolithically grown on Si substrates for photonic integration. To overcome the fundamental challenges of growing high-density, high uniformity QDs on InP-based material system, QD thickness in combination with a modified indium flush technique was adopted, resulting in a low threshold current density of 1.35 kA/cm2 and pulsed lasing up to 100 °C. These results represent progress in C-/L-band QD laser development on Si, highlighting the potential for high-performance semiconductor light source for long-haul telecommunication applications.
| Type: | Proceedings paper |
|---|---|
| Title: | Low threshold InAs/InP quantum dot lasers on Si |
| Event: | 2025 IEEE Silicon Photonics Conference (SiPhotonics) |
| Dates: | 14 Apr 2025 - 17 Apr 2025 |
| ISBN: | 979-8-3315-0618-6 |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1109/SiPhotonics64386.2025.10984482 |
| Publisher version: | https://doi.org/10.1109/siphotonics64386.2025.1098... |
| Language: | English |
| Additional information: | This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions. |
| Keywords: | L-band, quantum dots, photonic integration, MBE, telecommunication |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng |
| URI: | https://discovery.ucl.ac.uk/id/eprint/10209381 |
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