Dempsey, CP;
Dong, JT;
Villar Rodriguez, I;
Gul, Y;
Chatterjee, S;
Pendharkar, M;
Holmes, SN;
... Palmstrøm, CJ; + view all
(2025)
Effects of strain compensation on electron mobilities in InAs quantum wells grown on InP(001).
Physical Review Materials
, 9
(5)
, Article 054607. 10.1103/physrevmaterials.9.054607.
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Abstract
InAs quantum wells (QWs) grown on InP substrates are interesting for their applications in devices with high spin-orbit coupling and their potential role in creating topologically nontrivial hybrid heterostructures. These QWs rely on InGaAs cladding layers and InAlAs barrier layers to confine electrons within a thin InAs well. The highest mobility QWs are limited by interfacial roughness scattering and alloy disorder scattering in the cladding and barrier layers. Increasing QW thickness has been shown to reduce the effect of both of these scattering mechanisms. However, for current state-of-the-art devices with As-based cladding and barrier layers, the critical thickness is limited to ≤7 nm. In this paper, we demonstrate the use of strain compensation techniques in the In
Type: | Article |
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Title: | Effects of strain compensation on electron mobilities in InAs quantum wells grown on InP(001) |
Open access status: | An open access version is available from UCL Discovery |
DOI: | 10.1103/physrevmaterials.9.054607 |
Publisher version: | https://doi.org/10.1103/physrevmaterials.9.054607 |
Language: | English |
Additional information: | This version is the version of record. For information on re-use, please refer to the publisher’s terms and conditions. |
UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > London Centre for Nanotechnology |
URI: | https://discovery.ucl.ac.uk/id/eprint/10209089 |
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