Xhameni, Aferdita;
AlMutairi, AbdulAziz;
Guo, Xuyun;
Chircă, Irina;
Wen, Tianyi;
Hofmann, Stephan;
Nicolosi, Valeria;
(2025)
Forming and compliance-free operation of low-energy, fast-switching HfOxSy/HfS2 memristors.
Nanoscale Horizons
10.1039/d4nh00508b.
(In press).
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Abstract
We demonstrate low energy, forming and compliance-free operation of a resistive memory obtained by the partial oxidation of a two-dimensional layered van-der-Waals semiconductor: hafnium disulfide (HfS2). Semiconductor–oxide heterostructures are achieved by low temperature (<300 °C) thermal oxidation of HfS2 under dry conditions, carefully controlling process parameters. The resulting HfOxSy/HfS2 heterostructures are integrated between metal contacts, forming vertical crossbar devices. Forming-free, compliance-free resistive switching between non-volatile states is demonstrated by applying voltage pulses and measuring the current response in time. We show non-volatile memory operation with an RON/ROFF of 102, programmable by 80 ns WRITE and ERASE operations. Multiple stable resistance states are achieved by modulating pulse width and amplitude, down to 60 ns, < 20 pJ operation. This demonstrates the capability of these devices for low-energy, fast-switching and multi-state programming. Resistance states were retained without fail at 150 °C over 104 s, showcasing the potential of these devices for long retention times and resilience to ageing. Low-energy resistive switching measurements were repeated under vacuum (8.6 mbar) showing unchanged characteristics and no dependence of the device on surrounding oxygen or water vapour. Using a technology computer-aided design (TCAD) tool, we explore the role of the semiconductor layer in tuning the device conductance and driving gradual resistive switching in 2D HfOx-based devices.
| Type: | Article |
|---|---|
| Title: | Forming and compliance-free operation of low-energy, fast-switching HfOxSy/HfS2 memristors |
| Location: | England |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1039/d4nh00508b |
| Publisher version: | https://doi.org/10.1039/d4nh00508b |
| Language: | English |
| Additional information: | This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > London Centre for Nanotechnology |
| URI: | https://discovery.ucl.ac.uk/id/eprint/10204174 |
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