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Spin-polarized electron transport in ferromagnet/semiconductor hybrid structures induced by photon excitation

Hirohata, A; Xu, YB; Guertler, CM; Bland, JAC; Holmes, SN; (2001) Spin-polarized electron transport in ferromagnet/semiconductor hybrid structures induced by photon excitation. Physical Review B , 63 (10) , Article 104425. 10.1103/physrevb.63.104425. Green open access

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Abstract

Circularly polarized light was used to excite electrons with a spin polarization perpendicular to the film plane in 3⁢nm⁢A⁢u/5⁢nm⁢Ni80⁢Fe20/G⁢a⁢A⁢s⁡(100) structures with doping density in the range 1023 to 1025⁢m−3. At negative bias a helicity-dependent photocurrent dependent upon the magnetization configuration of the film and the Schottky barrier height was detected. The helicity-dependent photocurrent polarization decreases with increasing doping density and has the same variation with photon energy as found for the polarization of photoexcited electrons in GaAs. The results provide unambiguous evidence of spin-dependent electron transport through the NiFe/GaAs interface and show that the Schottky barrier height controls the spin-dependent electron current passing from the semiconductor to the ferromagnet.

Type: Article
Title: Spin-polarized electron transport in ferromagnet/semiconductor hybrid structures induced by photon excitation
Open access status: An open access version is available from UCL Discovery
DOI: 10.1103/physrevb.63.104425
Publisher version: https://doi.org/10.1103/PhysRevB.63.104425
Language: English
Additional information: This version is the version of record. For information on re-use, please refer to the publisher’s terms and conditions.
UCL classification: UCL
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: https://discovery.ucl.ac.uk/id/eprint/10198186
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