Hirohata, A;
Xu, YB;
Guertler, CM;
Bland, JAC;
Holmes, SN;
(2001)
Spin-polarized electron transport in ferromagnet/semiconductor hybrid structures induced by photon excitation.
Physical Review B
, 63
(10)
, Article 104425. 10.1103/physrevb.63.104425.
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Abstract
Circularly polarized light was used to excite electrons with a spin polarization perpendicular to the film plane in 3nmAu/5nmNi80Fe20/GaAs(100) structures with doping density in the range 1023 to 1025m−3. At negative bias a helicity-dependent photocurrent dependent upon the magnetization configuration of the film and the Schottky barrier height was detected. The helicity-dependent photocurrent polarization decreases with increasing doping density and has the same variation with photon energy as found for the polarization of photoexcited electrons in GaAs. The results provide unambiguous evidence of spin-dependent electron transport through the NiFe/GaAs interface and show that the Schottky barrier height controls the spin-dependent electron current passing from the semiconductor to the ferromagnet.
Type: | Article |
---|---|
Title: | Spin-polarized electron transport in ferromagnet/semiconductor hybrid structures induced by photon excitation |
Open access status: | An open access version is available from UCL Discovery |
DOI: | 10.1103/physrevb.63.104425 |
Publisher version: | https://doi.org/10.1103/PhysRevB.63.104425 |
Language: | English |
Additional information: | This version is the version of record. For information on re-use, please refer to the publisher’s terms and conditions. |
UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng |
URI: | https://discovery.ucl.ac.uk/id/eprint/10198186 |
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