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Spatially Resolved Dielectric Loss at the Si/SiO2 Interface

Cowie, Megan; Stock, Taylor JZ; Constantinou, Procopios C; Curson, Neil J; Grütter, Peter; (2024) Spatially Resolved Dielectric Loss at the Si/SiO2 Interface. Physical Review Letters , 132 (25) , Article 256202. 10.1103/physrevlett.132.256202. Green open access

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Abstract

The Si=SiO2 interface is populated by isolated trap states that modify its electronic properties. These traps are of critical interest for the development of semiconductor-based quantum sensors and computers, as well as nanoelectronic devices. Here, we study the electric susceptibility of the Si=SiO2 interface with nm spatial resolution using frequency-modulated atomic force microscopy. The sample measured here is a patterned dopant delta layer buried 2 nm beneath the silicon native oxide interface. We show that charge organization timescales of the Si=SiO2 interface range from 1–150 ns, and increase significantly around interfacial traps. We conclude that under time-varying gate biases, dielectric loss in metal-insulatorsemiconductor capacitor devices is in the frequency range of MHz to sub-MHz, and is highly spatially heterogeneous over nm length scales.

Type: Article
Title: Spatially Resolved Dielectric Loss at the Si/SiO2 Interface
Open access status: An open access version is available from UCL Discovery
DOI: 10.1103/physrevlett.132.256202
Publisher version: http://dx.doi.org/10.1103/physrevlett.132.256202
Language: English
Additional information: This version is the version of record. For information on re-use, please refer to the publisher’s terms and conditions.
UCL classification: UCL
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > London Centre for Nanotechnology
URI: https://discovery.ucl.ac.uk/id/eprint/10193842
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