Mtunzi, Makhayeni;
Jia, Hui;
Hou, Yaonan;
Yu, Xueying;
Zeng, Haotian;
Yang, Junjie;
Yan, Xingzhao;
... Liu, Huiyun; + view all
(2024)
High-quality germanium growth on (111)-faceted V-groove silicon by molecular beam epitaxy.
Journal of Physics D: Applied Physics
, 57
(25)
, Article 255101. 10.1088/1361-6463/ad31e0.
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Abstract
High-quality and low-defect-density germanium (Ge) buffer layers on silicon (Si) substrates have long been developed for group IV and III-V devices by suppressing defect propagation during epitaxial growth. This is a crucial step for the development of highly efficient photonic devices on Si substrates. Patterned silicon substrates have increasingly been employed for their ability to restrict and hinder the motion of defects. In this work, we demonstrate the effectiveness of an optimised two-step growth recipe structure on a (111)-faceted V-groove silicon substrate with a 350 nm flat ridge. This strategy succesfully reduces the threading dislocation density while growing a 1 µm Ge buffer layer via molecular beam epitaxy. As a result, a high-quality buffer is produced with a low threading dislocation density on the order of 107 cm-2 and a surface roughness below 1 nm.
| Type: | Article |
|---|---|
| Title: | High-quality germanium growth on (111)-faceted V-groove silicon by molecular beam epitaxy |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1088/1361-6463/ad31e0 |
| Publisher version: | http://dx.doi.org/10.1088/1361-6463/ad31e0 |
| Language: | English |
| Additional information: | Original content from this work may be used under the terms of the Creative Commons Attribution 4.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. |
| Keywords: | V-groove, Aspect ratio trapping, Annealing |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng |
| URI: | https://discovery.ucl.ac.uk/id/eprint/10189677 |
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