Pešić, Milan;
Beltrando, Bastien;
Padovani, Andrea;
Gangopadhyay, Shruba;
Kaliappan, Muthukumar;
Haverty, Michael;
Villena, Marco A;
... Shluger, Alexander L; + view all
(2021)
Variability sources and reliability of 3D-FeFETs.
In:
2021 IEEE International Reliability Physics Symposium (IRPS).
IEEE: Monterey, CA, USA.
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Abstract
Discovery of ferroelectricity (FE) in binary oxides enables the advent of FE memories and a plethora of novel CMOS compatible building blocks spanning from the logic domain to high-density storage and neuromorphic computing. In this paper we develop the first comprehensive model of vertical Ferroelectric Field Effect Transistor, V-FeFET, to identify sources of variability, understand retention problems, and point a path to improving reliability and enabling high-density storage FE memories with extended endurance.
Type: | Proceedings paper |
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Title: | Variability sources and reliability of 3D-FeFETs |
Event: | 2021 IEEE International Reliability Physics Symposium (IRPS) |
Dates: | 21 Mar 2021 - 25 Mar 2021 |
ISBN-13: | 978-1-7281-6893-7 |
Open access status: | An open access version is available from UCL Discovery |
DOI: | 10.1109/IRPS46558.2021.9405118 |
Publisher version: | http://dx.doi.org/10.1109/irps46558.2021.9405118 |
Language: | English |
Additional information: | This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions. |
Keywords: | V-FeFET, Ferroelectrics, HfOx, IGZO, Modeling, 3D-NAND |
UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > Dept of Physics and Astronomy |
URI: | https://discovery.ucl.ac.uk/id/eprint/10188323 |
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