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Techniques for Production of Large Area Graphene for Electronic and Sensor Device Applications

Li, Bing; Pan, Genhua; Awan, Shakil A; Avent, Neil; (2014) Techniques for Production of Large Area Graphene for Electronic and Sensor Device Applications. Graphene and 2D Materials , 1 (1) pp. 47-58. 10.2478/gpe-2014-0003. Green open access

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Abstract

Here we review commonly used techniques for the production of large area and high quality graphene to meet the requirements of industrial applications, including epitaxial growth on SiC, chemical vapour deposition (CVD) on transition metals and growth from solid carbon source. The review makes a comparison of the growth mechanisms, quality (such as mobility and homogeneity) and properties of the resultant graphene, limitations and the prospect of each production method. A particular focus of the review is on direct (transfer free) growth on dielectric substrate as this is potentially one of the promising techniques for graphene production which can readily be integrated into existing semiconductor fabrication processes.

Type: Article
Title: Techniques for Production of Large Area Graphene for Electronic and Sensor Device Applications
Open access status: An open access version is available from UCL Discovery
DOI: 10.2478/gpe-2014-0003
Publisher version: http://dx.doi.org/10.2478/gpe-2014-0003
Language: English
Additional information: © 2014 Bing Li et al., licensee De Gruyter Open. This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivs 3.0 License.
UCL classification: UCL
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > MAPS Faculty Office
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > MAPS Faculty Office > Institute for Materials Discovery
URI: https://discovery.ucl.ac.uk/id/eprint/10181539
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