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Resistance hysteresis in the integer and fractional quantum Hall regime

Peraticos, E; Kumar, S; Pepper, M; Siddiki, A; Farrer, I; Ritchie, D; Jones, G; (2023) Resistance hysteresis in the integer and fractional quantum Hall regime. Physical Review B , 107 (20) , Article 205307. 10.1103/PhysRevB.107.205307. Green open access

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Abstract

We present experimental results where hysteresis is observed depending on the magnetic field sweep direction in the integer quantum Hall regime of a high-mobility two-dimensional electron system formed in a GaAs/AlGaAs heterostructure. We analyze the results based on the screening theory and show that the anomalous effects observed stem from the nonequilibrium processes resulting from the formation of metal-like and insulator-like regions due to direct Coulomb interactions and the dissipative nature of the Hall bar together with the scattering-influenced contacts. Furthermore, the hysteretic behavior is shown for the integer filling factors ν=1, 2, and 4 and for certain fractional states at the longitudinal resistance. We argue that the nonequilibration is not only due to contacts, in contrast, but also due to the nature of the finite size dissipative Hall bar under interactions and Landau quantization.

Type: Article
Title: Resistance hysteresis in the integer and fractional quantum Hall regime
Open access status: An open access version is available from UCL Discovery
DOI: 10.1103/PhysRevB.107.205307
Publisher version: https://doi.org/10.1103/PhysRevB.107.205307
Language: English
Additional information: Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.
UCL classification: UCL
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: https://discovery.ucl.ac.uk/id/eprint/10172266
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