Yu, X;
Jia, H;
Dear, C;
Yuan, J;
Deng, H;
Tang, M;
Liu, H;
(2023)
Optically enhanced single- and multi-stacked 1.55 μm InAs/InAlGaAs/InP quantum dots for laser applications.
Journal of Physics D: Applied Physics
, 56
(28)
, Article 285101. 10.1088/1361-6463/acc875.
Preview |
PDF
Yu_2023_J._Phys._D__Appl._Phys._56_285101.pdf - Published Version Download (20MB) | Preview |
Abstract
For the development of InAs/InP quantum dot (QD) lasers for 1.55 μm telecom wavelength, there are two main challenges: (1) morphological preference for quantum dashes over QDs, and (2) generally poor size uniformity of QDs (dashes). This study addresses the issues, in synchronous, by demonstrating the improved optical properties of 1.55 μm InAs/InP QDs at room temperature with excellent reproducibility. A high-density (∼4 × 1010 cm−2) dot-like morphology was initially attained via adjusting the growth parameters, albeit with a large full-width at half-maximum (FWHM) of ∼80 meV and a peak position of a wavelength longer than 1.55 μm. For improvement, the indium-flush technique was employed, which enhanced the uniformity of InAs QDs and substantially lowered the FWHM of five (single) stacked QDs to 50.9 meV (47.9 meV). This technique also blue-shifted the emission peak to 1530.2 nm (1522 nm). The InAs/InP QDs presented are appropriate for the fabrication of high-performance 1.55 μm lasers on InP (001) and, potentially, emerging light sources on the important Si (001).
| Type: | Article |
|---|---|
| Title: | Optically enhanced single- and multi-stacked 1.55 μm InAs/InAlGaAs/InP quantum dots for laser applications |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1088/1361-6463/acc875 |
| Publisher version: | https://doi.org/10.1088/1361-6463%2Facc875 |
| Language: | English |
| Additional information: | This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third-party material in this article are included in the Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng |
| URI: | https://discovery.ucl.ac.uk/id/eprint/10169893 |
Archive Staff Only
 |
View Item |
