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Low threading dislocation density and antiphase boundary free GaAs epitaxially grown on on-axis Si (001) substrates

Yang, Junjie; Li, Keshuang; Jia, Hui; Deng, Huiwen; Yu, Xuezhe; Jurczak, Pamela; Park, Jae-Seong; ... Liu, Huiyun; + view all (2022) Low threading dislocation density and antiphase boundary free GaAs epitaxially grown on on-axis Si (001) substrates. Nanoscale 10.1039/d2nr04866c. Green open access

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Abstract

The interactions between 1D defect threading dislocations and 2D defect antiphase boundaries and antiphase boundary annihilation in III–V materials on Si heteroepitaxy growth are revealed.

Type: Article
Title: Low threading dislocation density and antiphase boundary free GaAs epitaxially grown on on-axis Si (001) substrates
Open access status: An open access version is available from UCL Discovery
DOI: 10.1039/d2nr04866c
Publisher version: https://doi.org/10.1039/d2nr04866c
Language: English
Additional information: This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third-party material in this article are included in the Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
UCL classification: UCL
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: https://discovery.ucl.ac.uk/id/eprint/10159654
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