Yang, Junjie;
Li, Keshuang;
Jia, Hui;
Deng, Huiwen;
Yu, Xuezhe;
Jurczak, Pamela;
Park, Jae-Seong;
... Liu, Huiyun; + view all
(2022)
Low threading dislocation density and antiphase boundary free GaAs epitaxially grown on on-axis Si (001) substrates.
Nanoscale
10.1039/d2nr04866c.
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Abstract
The interactions between 1D defect threading dislocations and 2D defect antiphase boundaries and antiphase boundary annihilation in III–V materials on Si heteroepitaxy growth are revealed.
| Type: | Article |
|---|---|
| Title: | Low threading dislocation density and antiphase boundary free GaAs epitaxially grown on on-axis Si (001) substrates |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1039/d2nr04866c |
| Publisher version: | https://doi.org/10.1039/d2nr04866c |
| Language: | English |
| Additional information: | This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third-party material in this article are included in the Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng |
| URI: | https://discovery.ucl.ac.uk/id/eprint/10159654 |
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