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Engineering Silicon Oxide by Argon Ion Implantation for High Performance Resistance Switching

Zhao, L; Ng, WH; Knights, AP; Stevanovic, DV; Mannion, DJ; Mehonic, A; Kenyon, AJ; (2022) Engineering Silicon Oxide by Argon Ion Implantation for High Performance Resistance Switching. Frontiers in Materials , 9 , Article 813407. 10.3389/fmats.2022.813407. Green open access

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Abstract

We report that implanting argon ions into a film of uniform atomic layer deposition (ALD)-grown SiOx enables electroforming and switching within films that previously failed to electroform at voltages <15 V. We note an implantation dose dependence of electroforming success rate: electroforming can be eliminated when the dosage is high enough. Our devices are capable of multi-level switching during both set and reset operations, and multiple resistance states can be retained for more than 30,000 s under ambient conditions. High endurance of more than 7 million (7.9 × 106) cycles is achieved alongside low switching voltages (±1 V). Comparing SiOx fabricated by this approach with sputtered SiOx we find similar conduction mechanisms between the two materials. Our results show that intrinsic SiOx switching can be achieved with defects created solely by argon bombardment; in contrast to defects generated during deposition, implantation generated defects are potentially more controllable. In the future, noble ion implantation into silicon oxide may allow optimization of already excellent resistance switching devices.

Type: Article
Title: Engineering Silicon Oxide by Argon Ion Implantation for High Performance Resistance Switching
Open access status: An open access version is available from UCL Discovery
DOI: 10.3389/fmats.2022.813407
Publisher version: https://doi.org/10.3389/fmats.2022.813407
Language: English
Additional information: © 2022 Zhao, Ng, Knights, Stevanovic, Mannion, Mehonic and Kenyon. This is an open-access article distributed under the terms of the Creative Commons Attribution License (CC BY). The use, distribution or reproduction in other forums is permitted, provided the original author(s) and the copyright owner(s) are credited and that the original publication in this journal is cited, in accordance with accepted academic practice. No use, distribution or reproduction is permitted which does not comply with these terms.
UCL classification: UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL
URI: https://discovery.ucl.ac.uk/id/eprint/10150402
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