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Recent Progress of Quantum Dot Lasers Monolithically Integrated on Si Platform

Cao, Victoria; Park, Jae-Seong; Tang, Mingchu; Zhou, Taojie; Seeds, Alwyn; Chen, Siming; Liu, Huiyun; (2022) Recent Progress of Quantum Dot Lasers Monolithically Integrated on Si Platform. Frontiers in Physics , 10 , Article 839953. 10.3389/fphy.2022.839953. Green open access

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Abstract

With continuously growing global data traffic, silicon (Si)-based photonic integrated circuits have emerged as a promising solution for high-performance Intra-/Inter-chip optical communication. However, a lack of a Si-based light source remains to be solved due to the inefficient light-emitting property of Si. To tackle the absence of a native light source, integrating III-V lasers, which provide superior optical and electrical properties, has been extensively investigated. Remarkably, the use of quantum dots as an active medium in III-V lasers has attracted considerable interest because of various advantages, such as tolerance to crystalline defects, temperature insensitivity, low threshold current density and reduced reflection sensitivity. This paper reviews the recent progress of III-V quantum dot lasers monolithically integrated on the Si platform in terms of the different cavity types and sizes and discusses the future scope and application.

Type: Article
Title: Recent Progress of Quantum Dot Lasers Monolithically Integrated on Si Platform
Open access status: An open access version is available from UCL Discovery
DOI: 10.3389/fphy.2022.839953
Publisher version: https://doi.org/10.3389/fphy.2022.839953
Language: English
Additional information: Copyright © 2022 Cao, Park, Tang, Zhou, Seeds, Chen and Liu. This is an open-access article distributed under the terms of the Creative Commons Attribution License (CC BY). The use, distribution or reproduction in other forums is permitted, provided the original author(s) and the copyright owner(s) are credited and that the original publication in this journal is cited, in accordance with accepted academic practice. No use, distribution or reproduction is permitted which does not comply with these terms.
Keywords: Si photonics, quantum dot, molecular beam epilaxy, semiconductor laser, DFB laser, modelocked laser, photonic crystal laser, LINEWIDTH ENHANCEMENT FACTOR, LOW-THRESHOLD, SEMICONDUCTOR-LASERS, DIFFERENTIAL GAIN, INTENSITY NOISE, DFB LASER, SILICON, GROWTH, ARRAY, PERFORMANCE
UCL classification: UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL
URI: https://discovery.ucl.ac.uk/id/eprint/10145223
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