Pakpour-Tabrizi, AC;
Yosinski, S;
Jennings-Moors, R;
Kobos, ZA;
Sawtelle, SD;
Reed, MA;
Jackman, RB;
(2022)
Diamond Nanowire Transistor with High Current Capability.
Physica Status Solidi (A) Applications and Materials Science
10.1002/pssa.202100622.
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Abstract
Carrier confinement in nanowire (NW) structures can offer a host of new material properties compared to bulk electronic devices. Diamond can be considered an ultimate semiconductor given its superlative electronic, physical, and optical properties. However, the development of diamond device technology has been hindered by doping problems in conventional device structures. Here, heavily doped diamond NWs, some 15 nm wide and only 1–2 nm deep overcome these issues and offer a significant advance in NW technology; transistor action can be induced with remote side gates alone, without the need for semiconductor junctions. Quasi-ballistic transport is most-likely responsible for extraordinary current handling capability of the NW transistors fabricated here at some 20 MA cm−2, being around 0.04 G0. This unipolar technology opens up a new paradigm in diamond nanoelectronic device technology.
| Type: | Article |
|---|---|
| Title: | Diamond Nanowire Transistor with High Current Capability |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1002/pssa.202100622 |
| Publisher version: | https://doi.org/10.1002/pssa.202100622 |
| Language: | English |
| Additional information: | This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third-party material in this article are included in the Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng |
| URI: | https://discovery.ucl.ac.uk/id/eprint/10142432 |
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