Lioliou, G; Renz, AB; Shah, VA; Gammon, PM; Barnett, AM; (2022) Mo/4H-SiC Schottky diodes for room temperature X-ray and γ-ray spectroscopy. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment , 1027 , Article 166330. 10.1016/j.nima.2022.166330.

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Abstract

Mo/4H-SiC Schottky diodes were investigated as detectors for their suitability in photon counting X-ray and -ray spectroscopy. The Schottky diodes, with a thick n epitaxial layer, were treated with a phosphorus pentoxide surface passivation, which had been previously shown to improve the homogeneity of the metal–semiconductor interface and supress leakage current. One device was coupled to a low-noise charge sensitive preamplifier and standard onwards readout electronics; the resultant spectrometer was used to accumulated X-ray and -ray spectra. The spectrometer had an energy resolution of 1.67 keV 0.08 keV (97 e rms 5 e rms) at 5.9 keV and 1.6 keV 0.1 keV (93 e rms 6 e rms) at 59.54 keV. Despite the moderate energy resolution achieved, the results suggested that the leakage current of the Mo/4H-SiC Schottky diode detector was not the dominant source of noise limiting the energy resolution of the spectrometer at the optimum operating conditions at room temperature; lossy dielectrics in close proximity to the input of the preamplifier (including stray dielectrics) and the relatively large average electron–hole pair creation energy of 4H-SiC (an inherent property) were the main contributors to the achieved energy resolution in energy terms.

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