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QCSE and carrier blocking in P-modulation doped InAs/InGaAs quantum dots

Mahoney, J; Smowton, PM; Maglio, B; Jarvis, L; Allford, C; Shutts, S; Tang, M; ... Abadía, N; + view all (2021) QCSE and carrier blocking in P-modulation doped InAs/InGaAs quantum dots. Presented at: CLEO: Applications and Technology 2021, San Jose, CA, USA. Green open access

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Abstract

The quantum confined Stark effect in InAs/InGaAs QDs using an undoped and p-modulation doped active region was investigated. Doping potentially offers more than a 3x increase in figure of merit modulator performance up to 100°C.

Type: Conference item (Presentation)
Title: QCSE and carrier blocking in P-modulation doped InAs/InGaAs quantum dots
Event: CLEO: Applications and Technology 2021
Location: San Jose, CA, USA
Dates: 9 May-14 May 2021
Open access status: An open access version is available from UCL Discovery
Publisher version: https://doi.org/10.1364/CLEO_AT.2021.JTu3A.167
Language: English
Additional information: This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions.
UCL classification: UCL
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: https://discovery.ucl.ac.uk/id/eprint/10139868
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