Mahoney, J;
Smowton, PM;
Maglio, B;
Jarvis, L;
Allford, C;
Shutts, S;
Tang, M;
... Abadía, N; + view all
(2021)
QCSE and carrier blocking in P-modulation doped InAs/InGaAs quantum dots.
Presented at: CLEO: Applications and Technology 2021, San Jose, CA, USA.
Preview |
Text
QCSEAndCarrierBlockingInPModulationDopedInAs-InGaAsQuantumDots.pdf - Accepted Version Download (669kB) | Preview |
Abstract
The quantum confined Stark effect in InAs/InGaAs QDs using an undoped and p-modulation doped active region was investigated. Doping potentially offers more than a 3x increase in figure of merit modulator performance up to 100°C.
Type: | Conference item (Presentation) |
---|---|
Title: | QCSE and carrier blocking in P-modulation doped InAs/InGaAs quantum dots |
Event: | CLEO: Applications and Technology 2021 |
Location: | San Jose, CA, USA |
Dates: | 9 May-14 May 2021 |
Open access status: | An open access version is available from UCL Discovery |
Publisher version: | https://doi.org/10.1364/CLEO_AT.2021.JTu3A.167 |
Language: | English |
Additional information: | This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions. |
UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng |
URI: | https://discovery.ucl.ac.uk/id/eprint/10139868 |




Archive Staff Only
![]() |
View Item |