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Normally-off Diamond Reverse Blocking MESFET

Cañas, J; Pakpour-Tabrizi, AC; Trajkovic, T; Udrea, F; Eon, D; Gheeraert, E; Jackman, RB; (2021) Normally-off Diamond Reverse Blocking MESFET. IEEE Transactions on Electron Devices 10.1109/ted.2021.3117237. (In press). Green open access

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Schottky contacts have been used to fabricate normally-off lateral reverse-blocking MESFETs on p-type (boron-doped) O-terminated monocrystalline diamond. The devices utilized an ohmic source contact but both gate and drain contacts were Schottky in nature. Boron-doped p-channel diamond MESFETs reported to date display the less attractive normally-on characteristics. Here, the normally-off transistor delivered a current level of ~1.5 μAmm⁻¹ at a negative VGS of 0.8 V and a transconductance (gₘ) of 16 μSmm⁻¹, measured at room temperature (RT); at a temperature of 425 K, these values rose to ~70 μAmm⁻¹ for IDS and a gₘ value of 260 μSmm⁻¹. In both cases, a negligible gate leakage current was measured with no breakdown apparent at the maximum field investigated here (3.7 x 10⁵ V/m⁻¹). The Schottky gate demonstrates a well-behaved control of the channel even at higher temperatures. The high-temperature operation, normally-off behavior, and diamond's inherent radiation hardness make this transistor promising for harsh environment applications.

Type: Article
Title: Normally-off Diamond Reverse Blocking MESFET
Open access status: An open access version is available from UCL Discovery
DOI: 10.1109/ted.2021.3117237
Publisher version: https://doi.org/10.1109/ted.2021.3117237
Language: English
Additional information: This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions.
Keywords: Diamond, MESFET, Molybdenum, Schottky
UCL classification: UCL
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: https://discovery.ucl.ac.uk/id/eprint/10136795
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