Cañas, J; Pakpour-Tabrizi, AC; Trajkovic, T; Udrea, F; Eon, D; Gheeraert, E; Jackman, RB; (2021) Normally-off Diamond Reverse Blocking MESFET. IEEE Transactions on Electron Devices 10.1109/ted.2021.3117237. (In press).

Preview

Text RB Diamond MESFET IEEE v23.pdf - Accepted Version Download (1MB) | Preview

Abstract

Schottky contacts have been used to fabricate normally-off lateral reverse-blocking MESFETs on p-type (boron-doped) O-terminated monocrystalline diamond. The devices utilized an ohmic source contact but both gate and drain contacts were Schottky in nature. Boron-doped p-channel diamond MESFETs reported to date display the less attractive normally-on characteristics. Here, the normally-off transistor delivered a current level of ~1.5 μAmm⁻¹ at a negative VGS of 0.8 V and a transconductance (gₘ) of 16 μSmm⁻¹, measured at room temperature (RT); at a temperature of 425 K, these values rose to ~70 μAmm⁻¹ for IDS and a gₘ value of 260 μSmm⁻¹. In both cases, a negligible gate leakage current was measured with no breakdown apparent at the maximum field investigated here (3.7 x 10⁵ V/m⁻¹). The Schottky gate demonstrates a well-behaved control of the channel even at higher temperatures. The high-temperature operation, normally-off behavior, and diamond's inherent radiation hardness make this transistor promising for harsh environment applications.

Download activity - last month

Export as JSONXMLCSV

Download activity - last 12 months

Export as JSONXMLCSV

Downloads by country - last 12 months

Export as JSONXMLCSV

Archive Staff Only

View Item