Cañas, J;
Pakpour-Tabrizi, AC;
Trajkovic, T;
Udrea, F;
Eon, D;
Gheeraert, E;
Jackman, RB;
(2021)
Normally-off Diamond Reverse Blocking MESFET.
IEEE Transactions on Electron Devices
10.1109/ted.2021.3117237.
(In press).
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Abstract
Schottky contacts have been used to fabricate normally-off lateral reverse-blocking MESFETs on p-type (boron-doped) O-terminated monocrystalline diamond. The devices utilized an ohmic source contact but both gate and drain contacts were Schottky in nature. Boron-doped p-channel diamond MESFETs reported to date display the less attractive normally-on characteristics. Here, the normally-off transistor delivered a current level of ~1.5 μAmm⁻¹ at a negative VGS of 0.8 V and a transconductance (gₘ) of 16 μSmm⁻¹, measured at room temperature (RT); at a temperature of 425 K, these values rose to ~70 μAmm⁻¹ for IDS and a gₘ value of 260 μSmm⁻¹. In both cases, a negligible gate leakage current was measured with no breakdown apparent at the maximum field investigated here (3.7 x 10⁵ V/m⁻¹). The Schottky gate demonstrates a well-behaved control of the channel even at higher temperatures. The high-temperature operation, normally-off behavior, and diamond's inherent radiation hardness make this transistor promising for harsh environment applications.
| Type: | Article |
|---|---|
| Title: | Normally-off Diamond Reverse Blocking MESFET |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1109/ted.2021.3117237 |
| Publisher version: | https://doi.org/10.1109/ted.2021.3117237 |
| Language: | English |
| Additional information: | This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions. |
| Keywords: | Diamond, MESFET, Molybdenum, Schottky |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng |
| URI: | https://discovery.ucl.ac.uk/id/eprint/10136795 |
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