Sivan, AK;
Di Mario, L;
Zhang, Y;
Catone, D;
O'Keeffe, P;
Turchini, S;
Mussi, V;
... Martelli, F; + view all
(2021)
Influence of diameter on temperature dynamics of hot carriers in photoexcited GaAsP nanowires.
Physical Review. B
, 104
(4)
, Article 045423. 10.1103/PhysRevB.104.045423.
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Abstract
Semiconductor nanowires (NWs) often present different structural and opto-electronic properties than their thin film counterparts. The thinner they are, the larger these differences are. Here, we present femtosecond transient absorbance measurements on GaAs0.8P0.2 NWs of two different diameters, 36 and 51 nm. The results show that thinner NWs sustain a higher carrier temperature for longer times than thicker NWs. This observation suggests that, in thinner NWs, the buildup of a hot-phonon bottleneck is easier than in thicker NWs because of the increased phonon scattering at the NW sidewalls, which facilitates the buildup of a large phonon density. Moreover, the important observation that the carrier temperature in thin NWs is higher than in thick NWs already at the beginning of the hot carrier regime suggests that the phonon-mediated scattering processes in the nonthermal regime play a major role at least for the carrier densities investigated here (8 × 1018 to 4 × 1019 cm–3). Our results also suggest that the phonon scattering at crystal defects is negligible compared with the phonon scattering at the NW sidewalls.
| Type: | Article |
|---|---|
| Title: | Influence of diameter on temperature dynamics of hot carriers in photoexcited GaAsP nanowires |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1103/PhysRevB.104.045423 |
| Publisher version: | https://doi.org/10.1103/PhysRevB.104.045423 |
| Language: | English |
| Additional information: | This version is the version of record. For information on re-use, please refer to the publisher’s terms and conditions. |
| Keywords: | Science & Technology, Technology, Physical Sciences, Materials Science, Multidisciplinary, Physics, Applied, Physics, Condensed Matter, Materials Science, Physics, SEMICONDUCTOR NANOWIRES, PHONON BOTTLENECK, QUANTUM-WELLS, SOLAR-CELLS, GAP, RELAXATION, SILICON, INP, DIODES |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng |
| URI: | https://discovery.ucl.ac.uk/id/eprint/10132689 |
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