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Monolithic and hybrid integration of InAs/GaAs quantum dot microdisk lasers on silicon

Kryzhanovskaya, N; Moiseev, E; Nadtochiy, A; Maximov, M; Dragunova, A; Fetisova, M; Kulagina, M; ... Zhukov, A; + view all (2021) Monolithic and hybrid integration of InAs/GaAs quantum dot microdisk lasers on silicon. In: Cheben, P and Čtyroký, J and Molina-Fernández, I, (eds.) Integrated Optics: Design, Devices, Systems and Applications VI. SPIE: Online conference. Green open access

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Abstract

A method of hybrid integration of quantum dot microdisk lasers with silicon wafer is proposed and realized. In addition to the possibility of combining microlasers with various silicon-based electronic and photonic devices, this makes it possible to significantly improve heat removal from the active region of the microlaser. The thermal resistance normalized to the mesa area reaches the level of about 0.002 (K/W)*cm2, which is significantly lower than the corresponding values of QD microlasers on GaAs substrate and monolithically grown on Si. As a result, the threshold current as well as current-induced shift of emission wavelength are reduced in continuous-wave regime.

Type: Proceedings paper
Title: Monolithic and hybrid integration of InAs/GaAs quantum dot microdisk lasers on silicon
Event: SPIE Optics + Optoelectronics, 2021
Open access status: An open access version is available from UCL Discovery
DOI: 10.1117/12.2589118
Publisher version: https://doi.org/10.1117/12.2589118
Language: English
Additional information: This version is the version of record. For information on re-use, please refer to the publisher’s terms and conditions.
UCL classification: UCL
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: https://discovery.ucl.ac.uk/id/eprint/10131934
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