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Assessment of GaPSb/Si tandem material association properties for photoelectrochemical cells

Chen, L; Alqahtani, M; Levallois, C; Létoublon, A; Stervinou, J; Piron, R; Boyer-Richard, S; ... Cornet, C; + view all (2021) Assessment of GaPSb/Si tandem material association properties for photoelectrochemical cells. Solar Energy Materials and Solar Cells , 221 , Article 110888. 10.1016/j.solmat.2020.110888. Green open access

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Abstract

Here, the structural, electronic and optical properties of the GaP1-xSbx/Si tandem materials association are determined in view of its use for solar water splitting applications. The GaPSb crystalline layer is grown on Si by Molecular Beam Epitaxy with different Sb contents. The bandgap value and bandgap type of GaPSb alloy are determined on the whole Sb range, by combining experimental absorption measurements with tight binding (TB) theoretical calculations. The indirect (X-band) to direct (Γ-band) cross-over is found to occur at 30% Sb content. Especially, at a Sb content of 32%, the GaP1-xSbx alloy reaches the desired 1.7eV direct bandgap, enabling efficient sunlight absorption, that can be ideally combined with the Si 1.1 eV bandgap. Moreover, the band alignment of GaP1-xSbx alloys and Si with respect to water redox potential levels has been analyzed, which shows the GaPSb/Si association is an interesting combination both for the hydrogen evolution and oxygen evolution reactions. These results open new routes for the development of III-V/Si low-cost high-efficiency photoelectrochemical cells.

Type: Article
Title: Assessment of GaPSb/Si tandem material association properties for photoelectrochemical cells
Open access status: An open access version is available from UCL Discovery
DOI: 10.1016/j.solmat.2020.110888
Publisher version: https://doi.org/10.1016/j.solmat.2020.110888
Language: English
Additional information: This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions.
Keywords: Solar water splitting, III-V/Si photoelectrode, Tandem material, 1.7/1.1eV bandgap combination, Band alignment
UCL classification: UCL
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences
URI: https://discovery.ucl.ac.uk/id/eprint/10117774
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