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New, Non-Pyrophoric Al-Precursor for the ALD of Al₂O₃: Influence of Purity Grade on Silicon Surface Passivation

Potts, SE; Lachaud, C; Lahootun, V; Hong, J; Madec, A; Kessels, E; (2012) New, Non-Pyrophoric Al-Precursor for the ALD of Al₂O₃: Influence of Purity Grade on Silicon Surface Passivation. Presented at: EU-PVSEC 2012, Frankfurt, Germany. Green open access

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Type: Poster
Title: New, Non-Pyrophoric Al-Precursor for the ALD of Al₂O₃: Influence of Purity Grade on Silicon Surface Passivation
Event: EU-PVSEC 2012
Location: Frankfurt, Germany
Dates: 24 - 28 September 2012
Open access status: An open access version is available from UCL Discovery
Publisher version: https://doi.org/10.4229/27thEUPVSEC2012-2AV.5.24
Language: English
UCL classification: UCL
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > Dept of Chemistry
URI: https://discovery.ucl.ac.uk/id/eprint/10114893
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