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All-MBE grown InAs/GaAs quantum dot lasers with thin Ge buffer layer on Si substrates

Yang, J; Liu, Z; Jurczak, P; Tang, M; Li, K; Pan, S; Sanchez, AM; ... Liu, H; + view all (2020) All-MBE grown InAs/GaAs quantum dot lasers with thin Ge buffer layer on Si substrates. Journal of Physics D: Applied Physics 10.1088/1361-6463/abbb49. (In press). Green open access

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Abstract

A high-performance III-V quantum-dot (QD) laser monolithically grown on Si is one of the most promising candidates for commercially viable Si-based lasers. Great efforts have been made to overcome the challenges due to the heteroepitaxial growth, including threading dislocations (TDs) and anti-phase boundaries (APBs), by growing a more than 2 µm thick III-V buffer layer. However, this relatively thick III-V buffer layer causes the formation of thermal cracks in III-V epi-layers, and hence a low yield of Si-based optoelectronic devices. In this paper, we demonstrate a usage of thin Ge buffer layer to replace the initial part of GaAs buffer layer on Si to reduce the overall thickness of the structure, while maintaining a low density of defects in III-V layers and hence the performance of the InAs/GaAs QD laser. A very high operating temperature of 130 °C has been demonstrated for an InAs/GaAs QD laser by this approach.

Type: Article
Title: All-MBE grown InAs/GaAs quantum dot lasers with thin Ge buffer layer on Si substrates
Open access status: An open access version is available from UCL Discovery
DOI: 10.1088/1361-6463/abbb49
Publisher version: https://doi.org/10.1088/1361-6463/abbb49
Language: English
Additional information: As the Version of Record of this article is going to be/has been published on a gold open access basis under a CC BY 3.0 licence, this Accepted Manuscript is available for reuse under a CC BY 3.0 licence immediately.
UCL classification: UCL
UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: https://discovery.ucl.ac.uk/id/eprint/10112145
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