Yang, J;
Liu, Z;
Jurczak, P;
Tang, M;
Li, K;
Pan, S;
Sanchez, AM;
... Liu, H; + view all
(2020)
All-MBE grown InAs/GaAs quantum dot lasers with thin Ge buffer layer on Si substrates.
Journal of Physics D: Applied Physics
10.1088/1361-6463/abbb49.
(In press).
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Abstract
A high-performance III-V quantum-dot (QD) laser monolithically grown on Si is one of the most promising candidates for commercially viable Si-based lasers. Great efforts have been made to overcome the challenges due to the heteroepitaxial growth, including threading dislocations (TDs) and anti-phase boundaries (APBs), by growing a more than 2 µm thick III-V buffer layer. However, this relatively thick III-V buffer layer causes the formation of thermal cracks in III-V epi-layers, and hence a low yield of Si-based optoelectronic devices. In this paper, we demonstrate a usage of thin Ge buffer layer to replace the initial part of GaAs buffer layer on Si to reduce the overall thickness of the structure, while maintaining a low density of defects in III-V layers and hence the performance of the InAs/GaAs QD laser. A very high operating temperature of 130 °C has been demonstrated for an InAs/GaAs QD laser by this approach.
| Type: | Article |
|---|---|
| Title: | All-MBE grown InAs/GaAs quantum dot lasers with thin Ge buffer layer on Si substrates |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1088/1361-6463/abbb49 |
| Publisher version: | https://doi.org/10.1088/1361-6463/abbb49 |
| Language: | English |
| Additional information: | As the Version of Record of this article is going to be/has been published on a gold open access basis under a CC BY 3.0 licence, this Accepted Manuscript is available for reuse under a CC BY 3.0 licence immediately. |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng |
| URI: | https://discovery.ucl.ac.uk/id/eprint/10112145 |
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