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Inversion Boundary Annihilation in GaAs Monolithically Grown on On-Axis Silicon (001)

Li, K; Yang, J; Lu, Y; Tang, M; Jurczak, P; Liu, Z; Yu, X; ... Liu, H; + view all (2020) Inversion Boundary Annihilation in GaAs Monolithically Grown on On-Axis Silicon (001). Advanced Optical Materials 10.1002/adom.202000970. (In press). Green open access

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Abstract

Monolithic integration of III–V materials and devices on CMOS compatible on-axis Si (001) substrates enables a route of low-cost and high-density Si-based photonic integrated circuits. Inversion boundaries (IBs) are defects that arise from the interface between III–V materials and Si, which makes it almost impossible to produce high-quality III–V devices on Si. In this paper, a novel technique to achieve IB-free GaAs monolithically grown on on-axis Si (001) substrates by realizing the alternating straight and meandering single atomic steps on Si surface has been demonstrated without the use of double Si atomic steps, which was previously believed to be the key for IB-free III–V growth on Si. The periodic straight and meandering single atomic steps on Si surface are results of high-temperature annealing of Si buffer layer. Furthermore, an electronically pumped quantum-dot laser has been demonstrated on this IB-free GaAs/Si platform with a maximum operating temperature of 120 °C. These results can be a major step towards monolithic integration of III–V materials and devices with the mature CMOS technology.

Type: Article
Title: Inversion Boundary Annihilation in GaAs Monolithically Grown on On-Axis Silicon (001)
Open access status: An open access version is available from UCL Discovery
DOI: 10.1002/adom.202000970
Publisher version: https://doi.org/10.1002/adom.202000970
Language: English
Additional information: This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
Keywords: heteroepitaxy, inversion boundary, molecular beam epitaxy, quantum dot laser, silicon photonics
UCL classification: UCL
UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: https://discovery.ucl.ac.uk/id/eprint/10111003
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