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Theoretical Study on the Effects of Dislocations in Monolithic III-V Lasers on Silicon

Hantschmann, C; Liu, Z; Tang, M; Chen, S; Seeds, AJ; Liu, H; White, IH; (2020) Theoretical Study on the Effects of Dislocations in Monolithic III-V Lasers on Silicon. Journal of Lightwave Technology , 38 (17) pp. 4801-4807. 10.1109/jlt.2020.2994300. Green open access

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Abstract

In this work, we present an approach to modelling III-V lasers on silicon based on a travelling-wave rate equation model with sub-micrometer resolution. By allowing spatially resolved inclusion of individual dislocations along the laser cavity, our simulation results offer new insights into the physical mechanisms behind the characteristics of 980 nm In(Ga)As/GaAs quantum well (QW) and 1.3 μm quantum dot (QD) lasers grown on silicon. We identify two effects with particular importance for practical applications from studying the reduction of the local gain in carrier-depleted regions around dislocation locations and the resulting impact on threshold current increase and slope efficiency at high dislocation densities. First, a large minority carrier diffusion length is a key parameter inhibiting laser operation by enabling carrier migration into dislocations over larger areas, and secondly, increased gain in dislocation-free regions compensating for gain dips around dislocations may contribute to gain compression effects observed in directly modulated silicon-based QD lasers. We believe that this work is an important contribution in creating a better understanding of the processes limiting the capabilities of III-V lasers on silicon in order to explore suitable materials and designs for monolithic light sources for silicon photonics.

Type: Article
Title: Theoretical Study on the Effects of Dislocations in Monolithic III-V Lasers on Silicon
Open access status: An open access version is available from UCL Discovery
DOI: 10.1109/jlt.2020.2994300
Publisher version: https://doi.org/10.1109/jlt.2020.2994300
Language: English
Additional information: This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions.
UCL classification: UCL
UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: https://discovery.ucl.ac.uk/id/eprint/10109228
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