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Effects of experimental parameters on the growth of GaN nanowires on Ti-film/Si(1 0 0) and Ti-foil by molecular beam epitaxy

Mudiyanselage, K; Katsiev, K; Idriss, H; (2020) Effects of experimental parameters on the growth of GaN nanowires on Ti-film/Si(1 0 0) and Ti-foil by molecular beam epitaxy. Journal of Crystal Growth , 547 , Article 125818. 10.1016/j.jcrysgro.2020.125818. Green open access

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Abstract

Gallium nitride (GaN) nanostructures are used in optoelectronic applications due to their unique optical and electronic properties. For some optoelectronic applications and potential photocatalytic systems, the growth of GaN nanowires on metallic substrates instead of expensive single crystalline semiconductors can be beneficial due to specific properties of metals. In this study, GaN nanowire systems were grown on 300 nm Ti-film/Si(1 0 0) and Ti-foil by plasma assisted molecular beam epitaxy (PA-MBE) and characterized in situ by Auger electron spectroscopy (AES) and ex situ by scanning electron microscopy (SEM). Effects of (i) the nature of substrate surface, (ii) Ga flux, and (iii) substrate temperature on the growth of GaN nanowires were investigated. Nearly vertical nanowires can be grown on Ti-films covered with amorphous TiOx or TiOxNy, which is formed during the nitridation process. To grow nearly vertical nanowires on Ti-foils, pre-nitridation of the substrate surface was found to be important. The orientation of GaN nanowires grown on nitridated Ti-foil is determined by the grain alignment of the original Ti-foil, however, GaN nanowires grown on nitridated Ti-foils are uniformly oriented to one direction within an individual grain, which is most likely due to the epitaxial relation between the nanowires and the underneath grains of the polycrystalline Ti-foils. Both the orientation and nanowire density vary on different grains.

Type: Article
Title: Effects of experimental parameters on the growth of GaN nanowires on Ti-film/Si(1 0 0) and Ti-foil by molecular beam epitaxy
Open access status: An open access version is available from UCL Discovery
DOI: 10.1016/j.jcrysgro.2020.125818
Publisher version: https://doi.org/10.1016/j.jcrysgro.2020.125818
Language: English
Additional information: This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions.
Keywords: GaN nanowires; Ti foil nitridation; in situ AES of film growth; Ti oxynitride layers; nanowires orientation.
UCL classification: UCL
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > Dept of Chemistry
URI: https://discovery.ucl.ac.uk/id/eprint/10106904
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