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Defect-Free Axially Stacked GaAs/GaAsP Nanowire Quantum Dots with Strong Carrier Confinement

Zhang, Y; Velichko, AV; Fonseka, HA; Parkinson, P; Gott, JA; Davis, G; Aagesen, M; ... Liu, H; + view all (2021) Defect-Free Axially Stacked GaAs/GaAsP Nanowire Quantum Dots with Strong Carrier Confinement. Nano Letters 10.1021/acs.nanolett.1c01461. (In press). Green open access

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Abstract

Axially stacked quantum dots (QDs) in nanowires (NWs) have important applications in nanoscale quantum devices and lasers. However, there is lack of study of defect-free growth and structure optimization using the Au-free growth mode. We report a detailed study of self-catalyzed GaAsP NWs containing defect-free axial GaAs QDs (NWQDs). Sharp interfaces (1.8-3.6 nm) allow closely stack QDs with very similar structural properties. High structural quality is maintained when up to 50 GaAs QDs are placed in a single NW. The QDs maintain an emission line width of <10 meV at 140 K (comparable to the best III-V QDs, including nitrides) after having been stored in an ambient atmosphere for over 6 months and exhibit deep carrier confinement (∼90 meV) and the largest reported exciton-biexciton splitting (∼11 meV) for non-nitride III-V NWQDs. Our study provides a solid foundation to build high-performance axially stacked NWQD devices that are compatible with CMOS technologies.

Type: Article
Title: Defect-Free Axially Stacked GaAs/GaAsP Nanowire Quantum Dots with Strong Carrier Confinement
Location: United States
Open access status: An open access version is available from UCL Discovery
DOI: 10.1021/acs.nanolett.1c01461
Publisher version: https://doi.org/10.1021/acs.nanolett.1c01461
Language: English
Additional information: © 2021 The Authors. Published by American Chemical Society. This is an Open Access article published under the terms of a Creative Commons license (https://creativecommons.org/licenses/by/4.0/).
Keywords: axially stacked quantum dots, carrier confinement, defect-free crystal, exciton−biexciton splitting, long-term stability, nanowire
UCL classification: UCL
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: https://discovery.ucl.ac.uk/id/eprint/10105445
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