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Roadmap of 1300-nm InAs/GaAs quantum dot laser grown on silicon for silicon photonics

Liu, Z; Liao, M; Hantschmann, C; Wang, Y; Zhou, T; Tang, M; Park, JS; ... Liu, H; + view all (2019) Roadmap of 1300-nm InAs/GaAs quantum dot laser grown on silicon for silicon photonics. In: Optics InfoBase Conference Papers. OSA: Wuhan, China. Green open access

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Abstract

Quantum dot (QD) lasers monolithically grown on silicon substrates have been considered as a promising approach for on-chip light sources in Si photonics. In this paper, the recent progress in Si-based InAs/GaAs QD lasers at 1300nm wavelength is demonstrated.

Type: Proceedings paper
Title: Roadmap of 1300-nm InAs/GaAs quantum dot laser grown on silicon for silicon photonics
Event: Optoelectronic Devices and Integration 2019
ISBN-13: 9781557528209
Open access status: An open access version is available from UCL Discovery
DOI: 10.1364/OEDI.2019.OTh1C.1
Publisher version: https://doi.org/10.1364/OEDI.2019.OTh1C.1
Language: English
Additional information: This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions.
UCL classification: UCL
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: https://discovery.ucl.ac.uk/id/eprint/10104911
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