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Monolithic III–V quantum-dot light sources on silicon for silicon photonics

Liao, Mengya; (2020) Monolithic III–V quantum-dot light sources on silicon for silicon photonics. Doctoral thesis (Ph.D), UCL (University College London). Green open access

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Abstract

Epitaxial growth of III–V materials on silicon (Si) substrates is one of the most promising techniques for generating coherent light on Si and offers a low-cost and high-yield solution for Si photonics. The main challenge of this technique is the large material dissimilarity between group IV and III–V compounds. These differences between group IV and III–V tend to produce various types of defects which all generate non-radiative recombination centres and dramatically undermine the promise of III–V materials. Multiple strategies for novel epitaxial growth technologies have been employed in order to reduce the defect density, resulting in high-quality III–V materials on Si. Very recently, III–V quantum-dot (QD) structures have drawn increasing attention for the implementation of compound semiconductor lasers on Si, due to their low threshold current density and reduced temperature sensitivity. In addition, QD structures have also been proven to be less sensitive to defects than conventional bulk materials and quantum well structures, mainly due to the stronger carrier localisation and hence reduced interaction with the defects. As a result, high-performance Si-based QD laser devices have been developed intensively. In order to fully utilize the advantages of Si photonics, the next challenge is to monolithically integrate the high-performance III-V QD lasers with other components, such as modulators and waveguides on a Si platform for information processing and transmission systems.

Type: Thesis (Doctoral)
Qualification: Ph.D
Title: Monolithic III–V quantum-dot light sources on silicon for silicon photonics
Event: UCL (University College London)
Open access status: An open access version is available from UCL Discovery
Language: English
Additional information: Copyright © The Author 2020. Original content in this thesis is licensed under the terms of the Creative Commons Attribution 4.0 International (CC BY 4.0) Licence (https://creativecommons.org/licenses/by/4.0/). Any third-party copyright material present remains the property of its respective owner(s) and is licensed under its existing terms. Access may initially be restricted at the author’s request.
UCL classification: UCL
UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: https://discovery.ucl.ac.uk/id/eprint/10100269
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