Senanayak, SP;
Abdi-Jalebi, M;
Kamboj, VS;
Carey, R;
Shivanna, R;
Tian, T;
Schweicher, G;
... Sirringhaus, H; + view all
(2020)
A general approach for hysteresis-free, operationally stable metal halide perovskite field-effect transistors.
Science Advances
, 6
(15)
, Article eaaz4948. 10.1126/sciadv.aaz4948.
Preview |
Text
eaaz4948.full.pdf - Published Version Download (747kB) | Preview |
Preview |
Text
aaz4948_SM.pdf - Published Version Download (4MB) | Preview |
Abstract
Despite sustained research, application of lead halide perovskites in field-effect transistors (FETs) has substantial concerns in terms of operational instabilities and hysteresis effects which are linked to its ionic nature. Here, we investigate the mechanism behind these instabilities and demonstrate an effective route to suppress them to realize high-performance perovskite FETs with low hysteresis, high threshold voltage stability (ΔV_{t} < 2 V over 10 hours of continuous operation), and high mobility values >1 cm^{2}/V·s at room temperature. We show that multiple cation incorporation using strain-relieving cations like Cs and cations such as Rb, which act as passivation/crystallization modifying agents, is an effective strategy for reducing vacancy concentration and ion migration in perovskite FETs. Furthermore, we demonstrate that treatment of perovskite films with positive azeotrope solvents that act as Lewis bases (acids) enables a further reduction in defect density and substantial improvement in performance and stability of n-type (p-type) perovskite devices.
| Type: | Article |
|---|---|
| Title: | A general approach for hysteresis-free, operationally stable metal halide perovskite field-effect transistors |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1126/sciadv.aaz4948 |
| Publisher version: | https://doi.org/10.1126/sciadv.aaz4948 |
| Language: | English |
| Additional information: | © 2020 The Authors, some rights reserved. This is an open-access article distributed under the terms of the Creative Commons Attribution-NonCommercial license (http://creativecommons.org/licenses/by-nc/4.0/). |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > MAPS Faculty Office UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > MAPS Faculty Office > Institute for Materials Discovery |
| URI: | https://discovery.ucl.ac.uk/id/eprint/10094924 |
Archive Staff Only
 |
View Item |
