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A novel precursor towards buffer layer materials: the first solution based CVD of zinc oxysulfide

Bhide, MA; Carmalt, CJ; Knapp, CE; (2020) A novel precursor towards buffer layer materials: the first solution based CVD of zinc oxysulfide. Journal of Materials Chemistry C 10.1039/d0tc00840k. (In press). Green open access

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Abstract

We report the first solution based deposition of zinc oxysulfide, Zn(O,S), thin films via aerosol-assisted chemical vapour deposition (AACVD) facilitated by the use of a specifically designed precursor: [Zn8(SOCCH3)12S2] (1). This buffer layer material, synthesised from the dual source AACVD reaction of 1 with ZnEt2 and MeOH was analysed via X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), energy dispersive X-ray (EDX) analysis, scanning electron microscopy (SEM), Hall effect measurements and UV/vis spectroscopy. The film was highly transparent (490%), conductive (r = 0.02998 O cm) and had a high charge carrier concentration (1.36 1019 cm3 ), making it a good contendor as a buffer layer in thin film photovoltaics. In an additional study, large area films were deposited and mapped to correlate compositional variation to optoelectronic properties

Type: Article
Title: A novel precursor towards buffer layer materials: the first solution based CVD of zinc oxysulfide
Open access status: An open access version is available from UCL Discovery
DOI: 10.1039/d0tc00840k
Publisher version: https://doi.org/10.1039/d0tc00840k
Language: English
Additional information: This article is licensed under a Creative Commons Attribution-NonCommercial 3.0 Unported Licence. http://creativecommons.org/licenses/by-nc/3.0/
UCL classification: UCL
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > Dept of Chemistry
URI: https://discovery.ucl.ac.uk/id/eprint/10094884
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