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Heterostructure and Q-factor engineering for low-threshold and persistent nanowire lasing

Skalsky, S; Zhang, Y; Alanis, JA; Fonseka, HA; Sanchez, AM; Liu, H; Parkinson, P; (2020) Heterostructure and Q-factor engineering for low-threshold and persistent nanowire lasing. Light: Science & Applications , 9 , Article 43. 10.1038/s41377-020-0279-y. Green open access

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Abstract

Continuous room temperature nanowire lasing from silicon-integrated optoelectronic elements requires careful optimisation of both the lasing cavity Q-factor and population inversion conditions. We apply time-gated optical interferometry to the lasing emission from high-quality GaAsP/GaAs quantum well nanowire laser structures, revealing high Q-factors of 1250 ± 90 corresponding to end-facet reflectivities of R = 0.73 ± 0.02. By using optimised direct–indirect band alignment in the active region, we demonstrate a well-refilling mechanism providing a quasi-four-level system leading to multi-nanosecond lasing and record low room temperature lasing thresholds (~6 μJ cm−2 pulse−1) for III–V nanowire lasers. Our findings demonstrate a highly promising new route towards continuously operating silicon-integrated nanolaser elements.

Type: Article
Title: Heterostructure and Q-factor engineering for low-threshold and persistent nanowire lasing
Location: England
Open access status: An open access version is available from UCL Discovery
DOI: 10.1038/s41377-020-0279-y
Publisher version: https://doi.org/10.1038/s41377-020-0279-y
Language: English
Additional information: This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
Keywords: Fluorescence spectroscopy, Nanowires, Semiconductor lasers
UCL classification: UCL
UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: https://discovery.ucl.ac.uk/id/eprint/10094299
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