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The occupied electronic structure of ultrathin boron doped diamond

Pakpour-Tabrizi, A; Schenk, A; Holt, AJ; Mahatha, SK; Arnold, F; Bianchi, M; Jackman, R; ... Mazzola, F; + view all (2020) The occupied electronic structure of ultrathin boron doped diamond. Nanoscale Advances 10.1039/c9na00593e. (In press). Green open access

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Abstract

Using angle-resolved photoelectron spectroscopy, we compare the electronic band structure of an ultrathin (1.8 nm) δ-layer of boron-doped diamond with a bulk-like boron doped diamond film (3 μm). Surprisingly, the measurements indicate that except for a small change in the effective mass, there is no significant difference between the electronic structure of these samples, irrespective of their physical dimensionality, except for a small modification of the effective mass. While this suggests that, at the current time, it is not possible to fabricate boron-doped diamond structures with quantum properties, it also means that nanoscale boron doped diamond structures can be fabricated which retain the classical electronic properties of bulk-doped diamond, without a need to consider the influence of quantum confinement.

Type: Article
Title: The occupied electronic structure of ultrathin boron doped diamond
Open access status: An open access version is available from UCL Discovery
DOI: 10.1039/c9na00593e
Publisher version: https://doi.org/10.1039/c9na00593e
Language: English
Additional information: This article is licensed under a Creative Commons Attribution-NonCommercial 3.0 Unported Licence (http://creativecommons.org/licenses/by-nc/3.0/).
UCL classification: UCL
UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: https://discovery.ucl.ac.uk/id/eprint/10092236
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