Le Boulbar, ED;
Jarvis, L;
Hayes, D;
Shutts, S;
Li, Z;
Tang, M;
Liu, H;
... Abadia, N; + view all
(2019)
Temperature Dependent Behavior of the Optical Gain and Electroabsorption Modulation Properties of an InAs/GaAs Quantum Dot Epistructure.
In:
2019 21st International Conference on Transparent Optical Networks (ICTON).
IEEE: Angers, France.
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Abstract
In this work, the feasibility of a monolithically integrated laser and electroabsorption modulator based on the same active quantum dot epistructure is studied. The net modal gain and the absorption in the modulator were measured using the segmented contact method from 25 °C to 125 °C. The maximum of the net modal gain active region of the laser decreases from 10 cm-1 at 25 °C to 3.9 cm-1 at 125 °C. The non-optimized maximum extinction ratio of the modulator, 4.1 dB·mm-1, is almost constant until 25 °C. The wavelengths at which the net modal gain and the change in absorption are maximum shifts with temperature by 0.04 eV.
| Type: | Proceedings paper |
|---|---|
| Title: | Temperature Dependent Behavior of the Optical Gain and Electroabsorption Modulation Properties of an InAs/GaAs Quantum Dot Epistructure |
| Event: | ICTON 2019 |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1109/ICTON.2019.8840542 |
| Publisher version: | https://doi.org/10.1109/ICTON.2019.8840542 |
| Language: | English |
| Additional information: | This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions. |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng |
| URI: | https://discovery.ucl.ac.uk/id/eprint/10090280 |
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