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Silicon-based III-V quantum-dot devices for silicon photonics

Wu, J; Chen, S; Tang, M; Liao, M; Liu, H; (2016) Silicon-based III-V quantum-dot devices for silicon photonics. In: Proceedings of the 2016 IEEE Photonics Society Summer Topical Meeting Series (SUM). (pp. pp. 118-119). IEEE Green open access

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Abstract

Monolithically integrating III-V lasers on Si is the most promising solution to overcome the issue of lack of efficient light sources on Si platform. We demonstrated the first practical silicon-based telecommunications-wavelength InAs/GaAs quantum dot lasers with low threshold current density, high output power, high operation temperature and long lifetime.

Type: Proceedings paper
Title: Silicon-based III-V quantum-dot devices for silicon photonics
Event: 2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)
Location: Newport Beach (CA), USA
Dates: 11th-13th July 2016
ISBN-13: 978-1-5090-1900-7
Open access status: An open access version is available from UCL Discovery
Publisher version: https://doi.org/10.1109/PHOSST.2016.7548748
Language: English
Additional information: Silicon, Gallium arsenide, Quantum dot lasers, Substrates, Photonics, Quantum well lasers
Keywords: Science & Technology, Physical Sciences, Technology, Optics, Telecommunications
UCL classification: UCL
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: https://discovery.ucl.ac.uk/id/eprint/10089040
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