Wu, J;
Chen, S;
Tang, M;
Liao, M;
Liu, H;
(2016)
Silicon-based III-V quantum-dot devices for silicon photonics.
In:
Proceedings of the 2016 IEEE Photonics Society Summer Topical Meeting Series (SUM).
(pp. pp. 118-119).
IEEE
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Abstract
Monolithically integrating III-V lasers on Si is the most promising solution to overcome the issue of lack of efficient light sources on Si platform. We demonstrated the first practical silicon-based telecommunications-wavelength InAs/GaAs quantum dot lasers with low threshold current density, high output power, high operation temperature and long lifetime.
| Type: | Proceedings paper |
|---|---|
| Title: | Silicon-based III-V quantum-dot devices for silicon photonics |
| Event: | 2016 IEEE Photonics Society Summer Topical Meeting Series (SUM) |
| Location: | Newport Beach (CA), USA |
| Dates: | 11th-13th July 2016 |
| ISBN-13: | 978-1-5090-1900-7 |
| Open access status: | An open access version is available from UCL Discovery |
| Publisher version: | https://doi.org/10.1109/PHOSST.2016.7548748 |
| Language: | English |
| Additional information: | Silicon, Gallium arsenide, Quantum dot lasers, Substrates, Photonics, Quantum well lasers |
| Keywords: | Science & Technology, Physical Sciences, Technology, Optics, Telecommunications |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng |
| URI: | https://discovery.ucl.ac.uk/id/eprint/10089040 |
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