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Enhanced performance of InAsP nanowires with ultra-thin passivation layer

Adeyemo, SO; Kar, S; Zhang, Y; Liu, H; Joyce, HJ; (2019) Enhanced performance of InAsP nanowires with ultra-thin passivation layer. In: Proceedings of the 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz). IEEE Green open access

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Abstract

Surface passivation with a higher band gap shell has been shown to successfully reduce the density of surface states at the surface of nanowires. The effect of ultra-thin InP passivation layers of thicknesses ~3-5 nm coated on InAsP nanowires is investigated and compared to bare InAsP nanowires. The ultrathin passivation exhibited an improvement in carrier lifetime and mobility by approximately a factor of 3. Surface recombination velocity was decreased by at least a factor of 3.

Type: Proceedings paper
Title: Enhanced performance of InAsP nanowires with ultra-thin passivation layer
Event: 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) 2019
Location: Paris, France
Dates: 1st-6th September 2019
ISBN-13: 978-1-5386-8285-2
Open access status: An open access version is available from UCL Discovery
DOI: 10.1109/IRMMW-THz.2019.8874492
Publisher version: https://doi.org/10.1109/IRMMW-THz.2019.8874492
Language: English
Additional information: This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions.
Keywords: Nanowires, Passivation, Indium phosphide, III-V semiconductor materials, Radiative recombination, Photoconductivity, Photonic band gap
UCL classification: UCL
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: https://discovery.ucl.ac.uk/id/eprint/10086953
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