Patel, K; Cottom, J; Bosman, M; Kenyon, AJ; Shluger, AL; (2018) Theoretical Study of Ag Interactions in Amorphous Silica RRAM Devices. In: Proceedings of the 2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA). IEEE

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Abstract

In this study, Density Functional Theory (DFT) calculations were used to model the incorporation and diffusion of Ag in Ag/a-Si02/Pt resistive random-access memory (RRAM) devices. The Ag clustering mechanism is vital for understanding device operation and at this stage is unknown. In this paper an O vacancy (Vo) mediated cluster model is presented, where the Vo is identified as the principle site for Ag^{+} reduction. The Ag^{+} interstitial is energetically favored at the Fermi energies of Ag and Pt, indicating that Ag^{+} ions are not reduced at the Pt electrode via electron tunneling. Instead, Ag^{+} ions bind to Vo forming the [Ag/Vo]^{+} complex, reducing Ag^{+} via charge transfer from the Si atoms in the vacancy. The [Ag/Vo]^{+} complex is then able to trap an electron forming [Ag/Vo]^{0} at the Fermi energy of Pt. This complex is then able to act as a nucleation site for of Ag clustering with the formation of [Ag2/Vo]^{+} which is reduced by the above mechanism.

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