Chan, S;
Kim, D;
Sanchez, AM;
Zhang, Y;
Tang, M;
Wu, J;
Liu, H;
(2019)
InAs/GaAs quantum dot solar cells with quantum dots in the base region.
IET Optoelectronics
, 13
(5)
pp. 215-217.
10.1049/iet-opt.2018.5069.
Preview |
Text
08845897.pdf - Published Version Download (1MB) | Preview |
Abstract
In this work, the influence of quantum dot (QD) position on the performance of solar cells was studied. The presence of QDs within the base regions leads to improved open circuit voltage ( V oc) from 0.73 to 0.90 V. Despite a slight reduction in short-circuit current ( J sc) due to carrier collection loss, the enhancement of the V oc of QDSCs with QDs in base region is significant enough to ensure that power conversion efficiencies ( η) are higher than the reference quantum dot solar cell (QDSC) of which QDs are embedded in the intrinsic region. Moreover, sample with QDs in deep base region achieved the highest η of 9.75%, an increase of 29% with regard to the reference quantum dot solar cell.
| Type: | Article |
|---|---|
| Title: | InAs/GaAs quantum dot solar cells with quantum dots in the base region |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1049/iet-opt.2018.5069 |
| Publisher version: | https://doi.org/10.1049/iet-opt.2018.5069 |
| Language: | English |
| Additional information: | This is an open access article published by the IET under the Creative Commons Attribution License (http://creativecommons.org/licenses/by/3.0/) |
| Keywords: | Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Optics, Telecommunications, Engineering, gallium arsenide, short-circuit currents, solar cells, indium compounds, semiconductor quantum dots, III-V semiconductors, quantum dot position, open circuit voltage, reference quantum dot solar cell, intrinsic region, deep base region, InAs-GaAs quantum dot solar cells, power conversion efficiency, voltage 0, 73 V to 0, 9 V, InAs-GaAs, EFFICIENCY |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng |
| URI: | https://discovery.ucl.ac.uk/id/eprint/10083769 |
Archive Staff Only
 |
View Item |
