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WC3.1-Dynamics of Quantum Dot Lasers on Silicon (Invited)

Hantschmann, C; Vasil'Ev, P; Chen, S; Liao, M; Seeds, A; Liu, H; Penty, R; (2019) WC3.1-Dynamics of Quantum Dot Lasers on Silicon (Invited). In: (Proceedings) 2019 IEEE Photonics Society Summer Topical Meeting Series (SUM). IEEE: Ft. Lauderdale, FL, USA. (In press). Green open access

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Abstract

InAs/GaAs quantum dot lasers epitaxially grown on silicon substrates are promising candidates as light sources for silicon photonic integrated circuits. We discuss their dynamic properties via small-signal and pulsed simulation and experiment, with a special focus on their potential for data transmission applications.

Type: Proceedings paper
Title: WC3.1-Dynamics of Quantum Dot Lasers on Silicon (Invited)
Event: 2019 IEEE Photonics Society Summer Topical Meeting Series (SUM)
ISBN-13: 9781728105970
Open access status: An open access version is available from UCL Discovery
DOI: 10.1109/PHOSST.2019.8795052
Publisher version: https://doi.org/10.1109/PHOSST.2019.8795052
Language: English
Additional information: This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions.
UCL classification: UCL
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: https://discovery.ucl.ac.uk/id/eprint/10082809
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