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Mid-wave InAs/GaSb Superlattice PiBN Infrared Photodetector Grown on GaAs Substrate

Huang, J; Guo, D; Deng, Z; Liu, H; Wu, J; Chen, B; (2018) Mid-wave InAs/GaSb Superlattice PiBN Infrared Photodetector Grown on GaAs Substrate. In: He, Jianjun and Dong, Xinyong and Shum Ping, Perry, (eds.) Proceedings of the 2018 Asia Communications and Photonics Conference (ACP 2018). IEEE Xplore: New York, USA. Green open access

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Abstract

We present a GaAs based PiBN InAs/GaSb type II superlattice photodetector for mid infrared application with peak responsivity of 0.52A/W at 3.2um at 77K under 0V.

Type: Proceedings paper
Title: Mid-wave InAs/GaSb Superlattice PiBN Infrared Photodetector Grown on GaAs Substrate
Event: 2018 Asia Communications and Photonics Conference (ACP 2018), 26-29 October 2018, Hangzhou, China
ISBN-13: 9781538661581
Open access status: An open access version is available from UCL Discovery
DOI: 10.1109/ACP.2018.8595800
Language: English
Additional information: This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions.
Keywords: Gallium arsenide, Photodetectors, Substrates, Dark current, Temperature measurement, Superlattices, Detectors
UCL classification: UCL
UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: https://discovery.ucl.ac.uk/id/eprint/10081132
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