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Increasing Maximum Gain in InAs Quantum Dot Lasers on GaAs and Si

Shutts, S; Spinnler, C; Li, Z; Jarvis, L; Le Boulbar, E; Hayes, D; Tang, M; ... Smowton, PM; + view all (2018) Increasing Maximum Gain in InAs Quantum Dot Lasers on GaAs and Si. In: Winzer, P and Tsang, HK and Capmany, J and Yao, J and Fontaine, N and Dutta, N, (eds.) (Proceedings) 31st Annual IEEE Photonics Conference (IPC) of the IEEE Photonics Society. IEEE: Reston, VA, USA. Green open access

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Abstract

InAs quantum-dot (QD) lasers emitting at 1300nm with nominally undoped and modulated p-type doping are studied. Modal-gain measurements indicate a higher gain can be achieved from the ground-state for a given Fermi-level separation with p-doping and a reduced temperature-dependence of threshold current for short-cavity lasers.

Type: Proceedings paper
Title: Increasing Maximum Gain in InAs Quantum Dot Lasers on GaAs and Si
Event: 31st Annual IEEE Photonics Conference (IPC) of the IEEE Photonics Society
Location: Reston, VA
Dates: 30 September 2018 - 04 October 2018
Open access status: An open access version is available from UCL Discovery
DOI: 10.1109/IPCon.2018.8527302
Publisher version: https://doi.org/10.1109/IPCon.2018.8527302
Language: English
Additional information: This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions.
Keywords: Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Optics, Physics, Applied, Engineering, Physics
UCL classification: UCL
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: https://discovery.ucl.ac.uk/id/eprint/10081098
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