Shutts, S;
Spinnler, C;
Li, Z;
Jarvis, L;
Le Boulbar, E;
Hayes, D;
Tang, M;
... Smowton, PM; + view all
(2018)
Increasing Maximum Gain in InAs Quantum Dot Lasers on GaAs and Si.
In: Winzer, P and Tsang, HK and Capmany, J and Yao, J and Fontaine, N and Dutta, N, (eds.)
(Proceedings) 31st Annual IEEE Photonics Conference (IPC) of the IEEE Photonics Society.
IEEE: Reston, VA, USA.
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Abstract
InAs quantum-dot (QD) lasers emitting at 1300nm with nominally undoped and modulated p-type doping are studied. Modal-gain measurements indicate a higher gain can be achieved from the ground-state for a given Fermi-level separation with p-doping and a reduced temperature-dependence of threshold current for short-cavity lasers.
Type: | Proceedings paper |
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Title: | Increasing Maximum Gain in InAs Quantum Dot Lasers on GaAs and Si |
Event: | 31st Annual IEEE Photonics Conference (IPC) of the IEEE Photonics Society |
Location: | Reston, VA |
Dates: | 30 September 2018 - 04 October 2018 |
Open access status: | An open access version is available from UCL Discovery |
DOI: | 10.1109/IPCon.2018.8527302 |
Publisher version: | https://doi.org/10.1109/IPCon.2018.8527302 |
Language: | English |
Additional information: | This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions. |
Keywords: | Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Optics, Physics, Applied, Engineering, Physics |
UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng |
URI: | https://discovery.ucl.ac.uk/id/eprint/10081098 |
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