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High frequency guided wave defect imaging in monocrystalline silicon wafers

Simon, M; Masserey, B; Robyr, JL; Fromme, P; (2019) High frequency guided wave defect imaging in monocrystalline silicon wafers. In: Proceedings of SPIE - The International Society for Optical Engineerin. SPIE: Denver, Colorado, United States. Green open access

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Abstract

Micro-cracks can be induced in thin monocrystalline silicon wafers during the manufacture of solar panels. High frequency guided waves allow for the monitoring of wafers and characterization of defects. Selective excitation of the first anti-symmetric A0 guided wave mode was achieved experimentally using a custom-made wedge transducer. The Lamb wave scattered field in the vicinity of artificial defects was measured using a noncontact laser interferometer. The surface extent of the shallow defects varying in size from 30 µm to 100 µm was characterized using an optical microscope. The characteristics of the scattered wave field were correlated to the defect size and the detection sensitivity was discussed.

Type: Proceedings paper
Title: High frequency guided wave defect imaging in monocrystalline silicon wafers
Event: SPIE SMART STRUCTURES + NONDESTRUCTIVE EVALUATION 3-7 March 2019
ISBN-13: 9781510625990
Open access status: An open access version is available from UCL Discovery
DOI: 10.1117/12.2513675
Publisher version: https://doi.org/10.1117/12.2513675
Language: English
Additional information: This version is the version of record. For information on re-use, please refer to the publisher’s terms and conditions.
Keywords: Monocrystalline Silicon, Lamb Waves, Scattering, Ultrasonics
UCL classification: UCL
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Mechanical Engineering
URI: https://discovery.ucl.ac.uk/id/eprint/10079433
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