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Interface modification in type-II ZnCdSe/Zn(Cd)Te QDs for high efficiency intermediate band solar cells

Deligiannakis, V; Dhomkar, S; Claro, MS; Kuskovsky, IL; Tamargo, MC; (2019) Interface modification in type-II ZnCdSe/Zn(Cd)Te QDs for high efficiency intermediate band solar cells. Journal of Crystal Growth , 512 pp. 203-207. 10.1016/j.jcrysgro.2019.02.025. Green open access

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Abstract

A new growth process for type-II ZnCdSe/ZnCdTe quantum dots (QDs) is developed to avoid formation of a deleterious strain-inducing ZnSe interfacial layer (IL) that forms during the migration enhanced epitaxy growth process used to form the QDs. This new growth sequence allows for improved control of the interfacial composition and simplifies the fabrication of the intermediate band solar cell device structure based on these QDs, since additional strain balancing schemes are no longer required to grow stress-free structures. In contrast to previous results, lattice-matched QD superlattices were obtained using near lattice-matched ZnCdSe barrier layers. X-ray diffraction and excitation intensity dependent photoluminescence studies were used to support such a conclusion. Our findings have applications for the growth of other heterointerfaces in which an undesirable IL may form due to lack of a common anion, and to desorption and incorporation of competing elements.

Type: Article
Title: Interface modification in type-II ZnCdSe/Zn(Cd)Te QDs for high efficiency intermediate band solar cells
Open access status: An open access version is available from UCL Discovery
DOI: 10.1016/j.jcrysgro.2019.02.025
Publisher version: https://doi.org/10.1016/j.jcrysgro.2019.02.025
Language: English
Additional information: This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions.
Keywords: Science & Technology, Physical Sciences, Technology, Crystallography, Materials Science, Multidisciplinary, Physics, Applied, Materials Science, Physics, Interfaces, Migration enhanced epitaxy, Semiconducting II-VI materials, Quantum Dots, QUANTUM DOTS, EPITAXY
UCL classification: UCL
UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > London Centre for Nanotechnology
URI: https://discovery.ucl.ac.uk/id/eprint/10078724
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