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Optimizing reactive ion etching to remove sub-surface polishing damage on diamond

Hicks, M-L; Pakpour-Tabrizi, AC; Zuerbig, V; Kirste, L; Nebel, C; Jackman, RB; (2019) Optimizing reactive ion etching to remove sub-surface polishing damage on diamond. Journal of Applied Physics , 125 (24) , Article 244502. 10.1063/1.5094751. Green open access

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Abstract

Low defect smooth substrates are essential to achieve high quality diamond epitaxial growth and high performance devices. The optimization of the Ar/O2/CF4 reactive ion etching (RIE) plasma treatment for diamond substrate smoothing and its effectiveness to remove subsurface polishing damage are characterized. An O2/CF4 RIE process and the effect of different process parameters (inductively coupled plasma, platen power, and pressure) were initially examined. This process, however, still produced a detrimental effect to surface roughness, with etch pits across the surface of the sample. The addition of argon to the process achieved near-zero surface pit density and reduced roughness by 20%–44% after 6 and 10 μm etching. Iterative high-resolution X-ray diffraction measurements provided a nondestructive tool to examine the effectiveness of polishing damage removal and in this case reduced after removal of 6 μm of material from the surface of the diamond substrate with the smoothing treatment.

Type: Article
Title: Optimizing reactive ion etching to remove sub-surface polishing damage on diamond
Open access status: An open access version is available from UCL Discovery
DOI: 10.1063/1.5094751
Publisher version: https://doi.org/10.1063/1.5094751
Language: English
Additional information: This version is the version of record. For information on re-use, please refer to the publisher’s terms and conditions.
UCL classification: UCL
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: https://discovery.ucl.ac.uk/id/eprint/10077144
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